Nanosphere monolayer-templated, ion-assisted nanofeature etching in dielectric materials : a numerical simulation of nanoscale ion flux topography
Yuan, Luqi, Zhong, Xiaoxia, & Ostrikov, Kostya (2008) Nanosphere monolayer-templated, ion-assisted nanofeature etching in dielectric materials : a numerical simulation of nanoscale ion flux topography. Nanotechnology, 19(15).
The results of numerical simulations of nanometer precision distributions of microscopic ion fluxes in ion-assisted etching of nanoscale features on the surfaces of dielectric materials using a self-assembled monolayer of spherical nanoparticles as a mask are presented. It is shown that the ion fluxes to the substrate and nanosphere surfaces can be effectively controlled by the plasma parameters and the external bias applied to the substrate. By proper adjustment of these parameters, the ion flux can be focused onto the areas uncovered by the nanospheres. Under certain conditions, the ion flux distributions feature sophisticated hexagonal patterns, which may lead to very different nanofeature etching profiles. The results presented are generic and suggest viable ways to overcome some of the limitations of the existing plasma-assisted nanolithography.
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|Item Type:||Journal Article|
|Keywords:||surface cleaning, etching, patterning, self-assembly, nanolithography, surfaces, interfaces and thin films, nanoscale science and low-D systems|
|Copyright Owner:||Copyright 2008 Institute of Physics Publishing Ltd.|
|Deposited On:||16 Jul 2014 22:58|
|Last Modified:||17 Jul 2014 22:51|
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