Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Cheng, Q., Xu, S., Chai, J.W., Huang, S.Y., Ren, Y.P., Long, J.D., Rutkevych, P.P., & Ostrikov, K. (2008) Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition. Thin Solid Films, 516(18), pp. 5991-5995.

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Abstract

Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 °C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X, cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X, hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X. The FTIR and XPS analyses show that the Si-C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms.

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12 citations in Web of Science®

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ID Code: 73963
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: Cubic silicon carbide, Hexagonal silicon carbide, ICPCVD, Scanning electron microscopy, X-ray diffraction
DOI: 10.1016/j.tsf.2007.10.091
ISSN: 0040-6090
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 15 Jul 2014 04:31
Last Modified: 15 Jul 2014 23:32

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