Nanoscale surface and interface engineering : why plasma-aided?

Ostrikov, K., Xu, S., Huang, S.Y., & Levchenko, I. (2008) Nanoscale surface and interface engineering : why plasma-aided? Surface and Coatings Technology, 202(22-23), pp. 5314-5318.

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Abstract

This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.

Impact and interest:

7 citations in Scopus
8 citations in Web of Science®
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ID Code: 73970
Item Type: Journal Article
Refereed: Yes
Additional Information: Paper presented in the Sixth Asian-European International Conference on Plasma Surface Engineering
Additional URLs:
Keywords: Nanofilms, p-n junction, PECVD, Plasma sources, Solar cells, Surface and interface properties
DOI: 10.1016/j.surfcoat.2008.06.165
ISSN: 0257-8972
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 16 Jul 2014 01:10
Last Modified: 22 Jun 2017 00:01

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