Nanoscale surface and interface engineering : why plasma-aided?
Ostrikov, K., Xu, S., Huang, S.Y., & Levchenko, I. (2008) Nanoscale surface and interface engineering : why plasma-aided? Surface and Coatings Technology, 202(22-23), pp. 5314-5318.
This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.
Impact and interest:
Citation counts are sourced monthly from and citation databases.
These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.
Citations counts from theindexing service can be viewed at the linked Google Scholar™ search.
|Item Type:||Journal Article|
|Additional Information:||Paper presented in the Sixth Asian-European International Conference on Plasma Surface Engineering|
|Keywords:||Nanofilms, p-n junction, PECVD, Plasma sources, Solar cells, Surface and interface properties|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||16 Jul 2014 01:10|
|Last Modified:||16 Jul 2014 22:49|
Repository Staff Only: item control page