Low-temperature PECVD of nanodevice-Grade nc-3C-SiC
Cheng, Q., Xu, S., Long, J., & Ostrikov, K. (2007) Low-temperature PECVD of nanodevice-Grade nc-3C-SiC. Chemical Vapor Deposition, 13(10), pp. 561-566.
In this work, we report a plasma-based synthesis of nanodevice-grade nc-3C-SiC films, with very high growth rates (7-9 nm min-1) at low and ULSI technology-compatible process temperatures (400-550 °C), featuring:
(i) high nanocrystalline fraction (67% at 550 °C);
(ii) good chemical purity;
(iii) excellent stoichiometry throughout the entire film;
(iv) wide optical band gap (3.22-3.71 eV);
(v) refractive index close to that of single-crystalline 3C-SiC, and;
(vi) clear, uniform, and defect-free Si-SiC interface.
The counter-intuitive low SiC hydrogenation in a H2-rich plasma process is explained by hydrogen atom desorption-mediated crystallization.
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|Item Type:||Journal Article|
|Keywords:||Deterministic nanofabrication, Nanocrystalline films, Nanodevice-grade materials, Plasma nanotools, Silicon carbide|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Copyright Owner:||Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim|
|Deposited On:||16 Jul 2014 04:43|
|Last Modified:||17 Jul 2014 03:12|
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