Low-temperature PECVD of nanodevice-Grade nc-3C-SiC

Cheng, Q., Xu, S., Long, J., & Ostrikov, K. (2007) Low-temperature PECVD of nanodevice-Grade nc-3C-SiC. Chemical Vapor Deposition, 13(10), pp. 561-566.

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Abstract

In this work, we report a plasma-based synthesis of nanodevice-grade nc-3C-SiC films, with very high growth rates (7-9 nm min-1) at low and ULSI technology-compatible process temperatures (400-550 °C), featuring:

(i) high nanocrystalline fraction (67% at 550 °C);

(ii) good chemical purity;

(iii) excellent stoichiometry throughout the entire film;

(iv) wide optical band gap (3.22-3.71 eV);

(v) refractive index close to that of single-crystalline 3C-SiC, and;

(vi) clear, uniform, and defect-free Si-SiC interface.

The counter-intuitive low SiC hydrogenation in a H2-rich plasma process is explained by hydrogen atom desorption-mediated crystallization.

Impact and interest:

11 citations in Scopus
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8 citations in Web of Science®

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ID Code: 74028
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: Deterministic nanofabrication, Nanocrystalline films, Nanodevice-grade materials, Plasma nanotools, Silicon carbide
DOI: 10.1002/cvde.200706624
ISSN: 0948-1907
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Deposited On: 16 Jul 2014 04:43
Last Modified: 17 Jul 2014 03:12

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