Self-interaction of surface polaritons at the narrow-gap n-type semiconductor metal interface
Azarenkov, N.A., Ostrikov, K., & Osmayev, O.A. (1993) Self-interaction of surface polaritons at the narrow-gap n-type semiconductor metal interface. Solid State Communications, 85(12), pp. 1065-1069.
The non-linear self-interaction of the potential surface polaritons (SP) which is due to the free carriers dispersion law where nonparabolicity is studied. The SP propagate at the interface between n-type semiconductor and a metal. The self interaction of the SP is shown to be different in semiconductors with normal and inverse zone structures. The results of the SP field envelope evolution are given. The obtained nonlinear frequency shift has been compared with shifts which are due to another self-interaction mechanisms. This comparison shows that the nonlinear self-interaction mechanism, which is due to free carriers spectrum nonparabolicity, is especially significant in narrow-gap semiconductor materials.
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|Item Type:||Journal Article|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||20 Jul 2014 23:54|
|Last Modified:||20 Jul 2014 23:54|
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