Nano-scale morphology and electron spectrum of defect states in low-k SiOCH films

Ligatchev, V., Wong Rusli, T.K.S., Liu, B., & Ostrikov, K. (2003) Nano-scale morphology and electron spectrum of defect states in low-k SiOCH films. In Materials Research Society Symposium - Proceedings, Boston, MA, pp. 487-492.

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Abstract

Results of experimental investigations on the relationship between nanoscale morphology of carbon doped hydrogenated silicon-oxide (SiOCH) low-k films and their electron spectrum of defect states are presented. The SiOCH films have been deposited using trimethylsilane (3MS) - oxygen mixture in a 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) system at variable RF power densities (from 1.3 to 2.6 W/cm2) and gas pressures of 3, 4, and 5 Torr. The atomic structure of the SiOCH films is a mixture of amorphous-nanocrystalline SiO2-like and SiC-like phases. Results of the FTIR spectroscopy and atomic force microscopy suggest that the volume fraction of the SiC-like phase increases from ∼0.2 to 0.4 with RF power. The average size of the nanoscale surface morphology elements of the SiO2-like matrix can be controlled by the RF power density and source gas flow rates. Electron density of the defect states N(E) of the SiOCH films has been investigated with the DLTS technique in the energy range up to 0.6 eV from the bottom of the conduction band. Distinct N(E) peaks at 0.25 - 0.35 eV and 0.42 - 0.52 eV below the conduction band bottom have been observed. The first N(E) peak is identified as originated from E1-like centers in the SiC-like phase. The volume density of the defects can vary from 1011 - 1017 cm-3 depending on specific conditions of the PECVD process.

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ID Code: 74180
Item Type: Conference Paper
Refereed: No
Additional URLs:
DOI: 10.1557/PROC-737-F3.41
ISSN: 0272-9172
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 21 Jul 2014 04:33
Last Modified: 21 Jul 2014 04:33

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