Numerical simulation of nanoparticle-generating electronegative plasmas in the PECVD of nanostructured silicon film
Denysenko, I., Ostrikov, K., Rutkevych, P.P., & Xu, S. (2004) Numerical simulation of nanoparticle-generating electronegative plasmas in the PECVD of nanostructured silicon film. Computational Materials Science, 30(3-4), pp. 303-307.
The results of numerical simulation of the equilibrium parameters of a low pressure nanopowder-generating discharge in silane for the plasma enhanced chemical vapor deposition (PECVD) of nanostructured silicon-based films are presented. It is shown that a low electron temperature and a low density of negative SiH3 - ions are favorable for the PECVD process. This opens a possibility to predict the main parameters of the reactive plasma and plasma-nucleated nanoparticles, and hence, to control the quality of silicon nanofilms.
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|Item Type:||Journal Article|
|Additional Information:||Theory, modeling and simulation of materials for advanced technologies : Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2003) and IUMRS International Conference in Asia (IUMRS-ICA 2003)|
|Keywords:||Nanoparticles, Silane plasma, Thin films|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||21 Jul 2014 03:24|
|Last Modified:||22 Jul 2014 00:57|
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