Third harmonic generation of the surface wave in the semiconductor-metal slowing-down structure
Azarenkov, N.A. & Ostrikov, K. (1991) Third harmonic generation of the surface wave in the semiconductor-metal slowing-down structure. Radiophysics and Quantum Electronics (Izvestiya VUZ : Radiofizika), 34(6), pp. 724-728.
A nonlinear process is considered of the surface wave third harmonics generation in a slowing-down semiconductor-metal structure. The process is conditioned by non-parabolicity of the charge carrier dispersion law. It is shown that in narrow-gap semiconducting materials it is necessary to account for the process together with the surface wave second harmonics generation conditioned by nonlinearity of quasi-hydrodynamics and the Maxwell equations. The conclusion is made that the third harmonies amplitude in narrow-gap semiconductors may exceed substantially the signal amplitude at the 3w frequency in a gas plasma and be of the same order with the surface waves second harmonies amplitude.
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|Item Type:||Journal Article|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||22 Jul 2014 02:58|
|Last Modified:||22 Jul 2014 02:58|
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