Third harmonic generation of the surface wave in the semiconductor-metal slowing-down structure

Azarenkov, N.A. & Ostrikov, K. (1991) Third harmonic generation of the surface wave in the semiconductor-metal slowing-down structure. Radiophysics and Quantum Electronics (Izvestiya VUZ : Radiofizika), 34(6), pp. 724-728.

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A nonlinear process is considered of the surface wave third harmonics generation in a slowing-down semiconductor-metal structure. The process is conditioned by non-parabolicity of the charge carrier dispersion law. It is shown that in narrow-gap semiconducting materials it is necessary to account for the process together with the surface wave second harmonics generation conditioned by nonlinearity of quasi-hydrodynamics and the Maxwell equations. The conclusion is made that the third harmonies amplitude in narrow-gap semiconductors may exceed substantially the signal amplitude at the 3w frequency in a gas plasma and be of the same order with the surface waves second harmonies amplitude.

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ID Code: 74215
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1007/BF01039590
ISSN: 1573-9120
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 22 Jul 2014 02:58
Last Modified: 22 Jul 2014 02:58

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