An improved gate driver for power MOSFETs using a cascode configuration

Broadmeadow, Mark, Ledwich, Gerard, & Walker, Geoffrey R. (2014) An improved gate driver for power MOSFETs using a cascode configuration. In Proceedings of the 7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014;, Institution of Engineering and Technology, Manchester, United Kingdom, pp. 1-6.


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To overcome the limitations of existing gate drive topologies an improved gate drive concept is proposed to provide fast, controlled switching of power MOSFETs. The proposed topology exploits the cascode configuration with the inclusion of an active gate clamp to ensure that the driven MOSFET may be turned off under all load conditions. Key operating principles and advantages of the proposed gate drive topology are discussed. Characteristic waveforms are investigated via simulation and experimentation for the cascode driver in an inductive switching application at 375V and 10A. Experimental waveforms compared well with simulations with long gate charging delays (including the Miller plateau) being eliminated from the gate voltage waveform.

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ID Code: 74568
Item Type: Conference Paper
Refereed: Yes
Keywords: Driver circuits, Power MOSFET
DOI: 10.1049/cp.2014.0303
ISBN: 9781849198158
Divisions: Current > Schools > School of Electrical Engineering & Computer Science
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2014 IET
Deposited On: 31 Jul 2014 00:22
Last Modified: 19 Jun 2015 10:42

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