Plasma Enabled Fabrication of Silicon Carbide Nanostructures
Fang, Jinghua, Levchenko, Igor, Aramesh, Morteza, Rider, Amanda E., Prawer, Steven, & Ostrikov, Kostya (2013) Plasma Enabled Fabrication of Silicon Carbide Nanostructures. In Li, Handong, Wu, Jiang, & Wang, Jiming M. (Eds.) Silicon-based Nanomaterials. Springer New York, pp. 161-178.
Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.
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|Item Type:||Book Chapter|
|Keywords:||Silicon carbide, Plasma, Chemical vapor deposition, Anodic aluminum oxide membrane|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2013 Springer Science+Business Media New York|
|Deposited On:||01 Aug 2014 01:43|
|Last Modified:||25 Aug 2016 15:52|
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