Plasma Enabled Fabrication of Silicon Carbide Nanostructures

Fang, Jinghua, Levchenko, Igor, Aramesh, Morteza, Rider, Amanda E., Prawer, Steven, & Ostrikov, Kostya (2013) Plasma Enabled Fabrication of Silicon Carbide Nanostructures. In Li, Handong, Wu, Jiang, & Wang, Jiming M. (Eds.) Silicon-based Nanomaterials. Springer New York, pp. 161-178.

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Abstract

Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.

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ID Code: 74619
Item Type: Book Chapter
Keywords: Silicon carbide, Plasma, Chemical vapor deposition, Anodic aluminum oxide membrane
DOI: 10.1007/978-1-4614-8169-0_8
ISBN: 9781461481683
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2013 Springer Science+Business Media New York
Deposited On: 01 Aug 2014 01:43
Last Modified: 25 Aug 2016 15:52

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