Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
Goh, E.S.M., Yang, H.Y., Han, Z.J., Chen, T.P., & Ostrikov, K. (2012) Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes. Applied Physics Letters, 101(26), pp. 263506-1.
Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.
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|Item Type:||Journal Article|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2012 American Institute of Physics|
|Deposited On:||05 Aug 2014 02:24|
|Last Modified:||22 Aug 2014 00:46|
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