Charge transport and density of trap states in balanced high mobility ambipolar organic thin-film transistors

Ha, T. J., Sonar, P., Cobb, B., & Dodabalapur, A. (2012) Charge transport and density of trap states in balanced high mobility ambipolar organic thin-film transistors. Organic Electronics: physics, materials, applications, 13(1), pp. 136-141.

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Abstract

We report on charge transport and density of trap states (trap DOS) in ambipolar diketopyrrolopyrrole-benzothiadiazole copolymer thin-film transistors. This semiconductor possesses high electron and hole field-effect mobilities of up to 0.6 cm 2/V-s. Temperature and gate-bias dependent field-effect mobility measurements are employed to extract the activation energies and trap DOS to understand its unique high mobility balanced ambipolar charge transport properties. The symmetry between the electron and hole transport characteristics, parameters and activation energies is remarkable. We believe that our work is the first charge transport study of an ambipolar organic/polymer based field-effect transistor with room temperature mobility higher than 0.1 cm 2/V-s in both electrons and holes.

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16 citations in Scopus
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25 citations in Web of Science®

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ID Code: 75210
Item Type: Journal Article
Refereed: Yes
Keywords: Ambipolar organic thin-film transistors, Charge carrier transport, Density of trap states, High mobility and balanced transport, Ambipolar, Charge-carrier transport, Density of trap state, Electrons and holes, Field-effect mobilities, High mobility, Hole transports, Organic thin film transistors, Room temperature mobility, Activation energy, Carrier mobility, Field effect transistors, Thin film transistors, Transport properties, Transistors
DOI: 10.1016/j.orgel.2011.10.003
ISSN: 15661199 (ISSN)
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: © 2011 Elsevier B.V.
Deposited On: 29 Oct 2014 05:43
Last Modified: 30 Oct 2014 01:31

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