Charge-carrier velocity distributions in high-mobility polymer dual-gate thin-film transistors

Ha, T. J., Sonar, P., & Dodabalapur, A. (2012) Charge-carrier velocity distributions in high-mobility polymer dual-gate thin-film transistors. Electron Device Letters, 33(6), pp. 899-901.

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We report charge-carrier velocity distributions in high-mobility polymer thin-film transistors (PTFTs) employing a dual-gate configuration. Our time-domain measurements of dual-gate PTFTs indicate higher effective mobility as well as fewer low-velocity carriers than in single-gate operation. Such nonquasi-static (NQS) measurements support and clarify the previously reported results of improved device performance in dual-gate devices by various groups. We believe that this letter demonstrates the utility of NQS measurements in studying charge-carrier transport in dual-gate thin-film transistors.

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5 citations in Scopus
5 citations in Web of Science®
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ID Code: 75214
Item Type: Journal Article
Refereed: Yes
Keywords: Charge-carrier transport, dual-gate configuration, nonquasi-static (NQS) measurements, polymer thin-film transistors (PTFTs), velocity distributions, Charge-carrier velocity, Device performance, Effective mobilities, High mobility, Low-velocity, Non quasi static, Time domain measurement, Polymeric films, Thin film transistors, Velocity distribution, Carrier mobility
DOI: 10.1109/LED.2012.2190034
ISSN: 0741-3106
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2012 IEEE
Deposited On: 27 Oct 2014 23:25
Last Modified: 22 Jun 2017 08:02

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