Solution-processed dual-gate polymer field-effect transistors for display applications

Ha, T. J., Sonar, P., & Dodabalapur, A. (2013) Solution-processed dual-gate polymer field-effect transistors for display applications. Journal of Display Technology, 9(9), pp. 710-714.

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Abstract

We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.

Impact and interest:

3 citations in Scopus
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3 citations in Web of Science®

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ID Code: 75216
Item Type: Journal Article
Refereed: Yes
Keywords: Charge carrier transport, Display applications, Dual-gate configuration, Non-quasi-static measurements, Polymer field-effect transistors (fets), Velocity distributions, Display application, Non quasi static, Polymer field effect transistors, Semiconductor layers, Single-gate devices, Thin-film transistor (TFTs), Transport measurements, Activation energy, Charge carriers, Naphthalene, Semiconductor devices, Thin film transistors, Velocity distribution, Carrier transport
DOI: 10.1109/JDT.2012.2224636
ISSN: 1551-319X
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2012 IEEE
Deposited On: 27 Oct 2014 23:09
Last Modified: 29 Oct 2014 04:02

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