Solution-processed dual-gate polymer field-effect transistors for display applications
Ha, T. J., Sonar, P., & Dodabalapur, A. (2013) Solution-processed dual-gate polymer field-effect transistors for display applications. Journal of Display Technology, 9(9), pp. 710-714.
We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.
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|Item Type:||Journal Article|
|Keywords:||Charge carrier transport, Display applications, Dual-gate configuration, Non-quasi-static measurements, Polymer field-effect transistors (fets), Velocity distributions, Display application, Non quasi static, Polymer field effect transistors, Semiconductor layers, Single-gate devices, Thin-film transistor (TFTs), Transport measurements, Activation energy, Charge carriers, Naphthalene, Semiconductor devices, Thin film transistors, Velocity distribution, Carrier transport|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2012 IEEE|
|Deposited On:||27 Oct 2014 23:09|
|Last Modified:||29 Oct 2014 04:02|
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