Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

Singh, Samarendra P., Sonar, Prashant, Sellinger, Alan, & Dodabalapur, Ananth (2009) Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors. Applied Physics Letters, 94(1), 013308.

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We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems.

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6 citations in Web of Science®

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ID Code: 75233
Item Type: Journal Article
Refereed: Yes
Keywords: Bipolar transistors, Field effect transistors, Heterojunction bipolar transistors, Heterojunctions, Active layers, Balanced electrons, Electrical characteristics, Heterostructure, Hole injections, Semi-conductors, Source and drains, Steady states, Transfer characteristics, Two materials, Transistors
DOI: 10.1063/1.3064160
ISSN: 0003-6951
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2009 American Institute of Physics.
Deposited On: 27 Oct 2014 22:19
Last Modified: 29 Oct 2014 06:07

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