A study of the effects metal residues in poly(9,9-dioctylfluorene) have on field-effect transistor device characteristics

Sonar, P., Grimsdale, A. C., Heeney, M., Shkunov, M., McCulloch, I., & Müllen, K. (2007) A study of the effects metal residues in poly(9,9-dioctylfluorene) have on field-effect transistor device characteristics. Synthetic Metals, 157(21), pp. 872-875.

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Abstract

The amount of metal residues from organometallic reagents used in preparation of poly(9,9-dioctylfluorene) by palladium catalysed Suzuki and nickel-induced Yamamoto polycondensations have been determined, and their effect upon the behaviour of the polymer in field-effect transistors (FETs) has been measured. The metal levels from material polymerised by Suzuki method were found to be much higher than from that made by the Yamamoto procedure. Simple treatment of the polymers with suitable metal trapping reagents lowered the metal levels significantly, with EDTA giving best results for nickel and triphenylphosphine for palladium. Comparison of the behaviour of FETs using polyfluorenes with varying levels of metal contamination, showed that the metal residues have little effect upon the mobility values, but often affect the degree of hysteresis, possibly acting as charge traps. Satisfactory device performances were obtained from polymer with palladium levels of 2000 μg/g suggesting that complete removal of metal residues may not be necessary for satisfactory device performance.

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ID Code: 75237
Item Type: Journal Article
Refereed: Yes
Keywords: Charge carrier mobility, Charge trapping, Conjugated polymer, Field-effect transistor, Organometallic coupling, Charge carriers, Field effect transistors, Nickel, Palladium, Metal residues, Conjugated polymers
DOI: 10.1016/j.synthmet.2007.08.017
ISSN: 03796779 (ISSN)
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: © 2007 Elsevier B.V.
Deposited On: 29 Oct 2014 05:10
Last Modified: 30 Oct 2014 02:36

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