Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

Zhou, Y., Han, S. T., Sonar, P., & Roy, V. A. L. (2013) Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism. Scientific Reports, 3(2319).

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The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.

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23 citations in Scopus
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32 citations in Web of Science®

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36 since deposited on 21 Aug 2014
24 in the past twelve months

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ID Code: 75269
Item Type: Journal Article
Refereed: Yes
Keywords: polymer, article, chemistry, data storage device, equipment design, equipment failure, information retrieval, materials testing, methodology, semiconductor, static electricity, Computer Storage Devices, Equipment Failure Analysis, Information Storage and Retrieval, Polymers, Semiconductors
DOI: 10.1038/srep02319
ISSN: 20452322 (ISSN)
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2013 The authors
Copyright Statement: This work is licensed under a Creative Commons Attribution- NonCommercial-NoDerivs 3.0 Unported license. To view a copy of this license, visit
Deposited On: 21 Aug 2014 04:07
Last Modified: 03 Oct 2014 00:40

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