Engineering thin film semiconductor gas sensors to increase sensitivity and decrease operation temperature
Bell, John M. & Tesfamichael, Tuquabo (2013) Engineering thin film semiconductor gas sensors to increase sensitivity and decrease operation temperature. In Marquis, Fernand (Ed.) Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing, John Wiley & Sons, Inc., Hawaii, USA, pp. 1917-1928.
Thin film nanostructured gas sensors typically operate at temperatures above 400°C, but lower temperature operation is highly desirable, especially for remote area field sensing as this reduces significantly power consumption. We have investigated a range of sensor materials based on both pure and doped tungsten oxide (mainly focusing on Fe-doping), deposited using both thermal evaporation and electron-beam evaporation, and using a variety of post-deposition annealing. The films show excellent sensitivity at operating temperatures as low as 150°C for detection of NO2. There is a definite relationship between the sensitivity and the crystallinity and nanostructure obtained through the deposition and heat treatment processes, as well as variations in the conductivity caused both by doping and heat treatmetn. The ultimate goal of this work is to control the sensing properties, including selectivity to specific gases through the engineering of the electronic properties and the nanostructure of the films.
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|Item Type:||Conference Paper|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2014 [please consult the author]|
|Deposited On:||09 Sep 2014 23:30|
|Last Modified:||14 Sep 2014 05:30|
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