Analysis of Nitrogen Implanted Tin Oxide Films used in Dye-Sensitised Solar Cells
Tesfamichael, Tuquabo, Will, Geoffrey D., Kelly, Ian, & Bell, John M. (2004) Analysis of Nitrogen Implanted Tin Oxide Films used in Dye-Sensitised Solar Cells. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 217(1), pp. 97-103.
We have investigated the distribution and amount of nitrogen implanted in tin oxide films using SIMS and XPS depth profiling. The amount of nitrogen was found to increase with increasing ion dose and energy. In the nitrogen depth profile a peak was observed indicating the position of the maximum nitrogen concentration and the result was verified using theoretical calculations. The relative distribution of nitrogen compared to tin was found to decrease continuously with increasing depth of the film.
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|Item Type:||Journal Article|
|Additional Information:||For more information, please refer to the journal's website (see hypertext link) or contact the author. email@example.com|
|Keywords:||tin oxide, nitrogen ion implantation, XPS analysis, SIMS depth profiling|
|Subjects:||Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Materials Engineering not elsewhere classified (091299)|
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering|
|Copyright Owner:||Copyright 2004 Elsevier|
|Deposited On:||15 May 2007 00:00|
|Last Modified:||29 Feb 2012 13:05|
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