Characterization of Nitrogen-Implanted TiO2 Nanostructured Films

Zhou, Hao, Tesfamichael, Tuquabo, Bell, John, & Prince, Kathryn (2006) Characterization of Nitrogen-Implanted TiO2 Nanostructured Films. Materials Science and Engineering B: Advanced Functional Solid-state Materials, 126(1), pp. 44-48.

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Nanostructured tanium dioxide (TiO2) films were implanted with N+ at 40 keV and ion dose range of 1016/cm2 to 4 × 1016/cm2, and annealed at temperatures between 673 and 973 K. From XRD and TEM analyses it was found that the anatase phase of TiO2 remained stable up to annealing temperature of 973 K. The samples showed narrower XRD peaks corresponding to larger mean-grain sizes comparing to the un-implanted TiO2 samples. The SIMS depth profile showed a peak of nitrogen concentration at about 60 nm beneath the film surface and this was confirmed using the SRIM-2003 program for simulating ion beam interactions with matter. The absorption spectra of the films as measured using spectrophotometer were found to shift toward longer wavelengths with the increase of ion dose.

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ID Code: 7672
Item Type: Journal Article
Refereed: Yes
Additional Information: For more information, please refer to the journal's website (see hypertext link) or contact the author.
Keywords: Titanium dioxide, Ion implantation, Nitrogen, Annealing
DOI: 10.1016/j.mseb.2005.08.069
ISSN: 0921-5107
Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Materials Engineering not elsewhere classified (091299)
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Copyright Owner: Copyright 2006 Elsevier
Deposited On: 15 May 2007 00:00
Last Modified: 29 Feb 2012 13:13

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