Comparison of the gate drive parameter space for driving power MOSFETs using conventional and cascode configurations

Broadmeadow, Mark A.H., Walker, Geoffrey R., & Ledwich, Gerard F. (2014) Comparison of the gate drive parameter space for driving power MOSFETs using conventional and cascode configurations. In Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition, IEEE, Pittsburgh, PA, pp. 3002-3009.

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Conventional voltage driven gate drive circuits utilise a resistor to control the switching speed of power MOS-FETs. The gate resistance is adjusted to provide controlled rate of change of load current and voltage. The cascode gate drive configuration has been proposed as an alternative to the conventional resistor-fed gate drive circuit. While cascode drive is broadly understood in the literature the switching characteristics of this topology are not well documented. This paper explores, through both simulation and experimentation, the gate drive parameter space of the cascode gate drive configuration and provides a comparison to the switching characteristics of conventional gate drive.

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ID Code: 78798
Item Type: Conference Paper
Refereed: Yes
Keywords: Capacitance, Logic gates, MOSFET, Resistance, Switches, Switching loss, Trajectory
DOI: 10.1109/ECCE.2014.6953808
ISBN: 9781479957767
Divisions: Current > Schools > School of Electrical Engineering & Computer Science
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2014 IEEE
Copyright Statement: Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Deposited On: 20 Nov 2014 02:55
Last Modified: 17 Jun 2015 02:44

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