Nitrogen Ion Implantation and Characterization of Tungsten Oxide Films
Tesfamichael, Tuquabo & Bell, John (2005) Nitrogen Ion Implantation and Characterization of Tungsten Oxide Films. In Chiao, Jung-Chih, Dzurak, Andrew S. Dzurak, Jagadish, Chennupati, & Thiel, David V. (Eds.) Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE, 12-14 December 2005, Brisbane, Australia.
This paper implements modification of tungsten oxide film using ion implantation and a physical characterization of the film. The film was implanted with nitrogen at energies between 10 keV and 40 keV and ion dose range 1014–1016 cm-2. The surface morphology of the film after implantation has been modified as observed using electron microscopy. The transmittance of the film was found to decrease with increasing implantation energy and ion dose as measured using conventional spectrophotometer. Depth profile of nitrogen was analyzed using Secondary Ion Mass Spectroscopy (SIMS) and found a peak of nitrogen across the depth of the implanted layer. The amount of nitrogen was found to increase with increasing ion dose and energy. From electron diffraction a broader diffraction rings were revealed from both the implanted and un-implanted layers, indicating that the crystalline properties of the tungsten oxide film after ion implantation remains the same.
Impact and interest:
Citation counts are sourced monthly from and citation databases.
These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.
Citations counts from theindexing service can be viewed at the linked Google Scholar™ search.
Full-text downloads displays the total number of times this work’s files (e.g., a PDF) have been downloaded from QUT ePrints as well as the number of downloads in the previous 365 days. The count includes downloads for all files if a work has more than one.
|Item Type:||Conference Item (Poster)|
|Keywords:||Tungsten oxide, Nitrogen ion implantation, Optical properties, Microscopic structure, Nitrogen depth profile|
|Subjects:||Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Materials Engineering not elsewhere classified (091299)|
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering|
|Copyright Owner:||Copyright 2005 The Society of Photo-Optical Instrumentation Engineers.|
|Copyright Statement:||This paper was published in Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE and is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.|
|Deposited On:||04 Jun 2007 00:00|
|Last Modified:||29 Feb 2012 13:16|
Repository Staff Only: item control page