Jet and flash imprint defectivity - Assessment and reduction for semiconductor applications
Malloy, M., Litt, L. C., Johnson, S., Resnick, D. J., & Lovell, D. R. (2011) Jet and flash imprint defectivity - Assessment and reduction for semiconductor applications. In Proceedings of SPIE 7970 Alternative Lithographic Technologies III, SPIE.
Defectivity has been historically identified as a leading technical roadblock to the implementation of nanoimprint lithography for semiconductor high volume manufacturing. The lack of confidence in nanoimprint's ability to meet defect requirements originates in part from the industry's past experiences with 1 × lithography and the shortage in enduser generated defect data. SEMATECH has therefore initiated a defect assessment aimed at addressing these concerns. The goal is to determine whether nanoimprint, specifically Jet and Flash Imprint Lithography from Molecular Imprints, is capable of meeting semiconductor industry defect requirements. At this time, several cycles of learning have been completed in SEMATECH's defect assessment, with promising results. J-FIL process random defectivity of < 0.1 def/cm2 has been demonstrated using a 120nm half-pitch template, providing proof of concept that a low defect nanoimprint process is possible. Template defectivity has also improved significantly as shown by a pre-production grade template at 80nm pitch. Cycles of learning continue on feature sizes down to 22nm. © 2011 SPIE.
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|Item Type:||Conference Paper|
|Keywords:||Defectivity, HVM, J-FIL, Jet and flash imprint lithography, Molecular Imprints, Nanoimprint, NIL, S-FIL, Step and flash imprint lithography, Molecular imprint, Nano-imprint, Defects, Molecular modeling, Rating, Semiconductor device manufacture, Nanoimprint lithography|
|ISBN:||0277786X (ISSN); 9780819485298 (ISBN)|
|Divisions:||Current > Schools > School of Electrical Engineering & Computer Science
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Deposited On:||07 Jan 2015 03:36|
|Last Modified:||19 Jan 2015 05:58|
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