Surface engineering of reduced graphene oxide for controllable ambipolar flash memories
Han, Su-Ting, Zhou, Ye, Sonar, Prashant, Wei, Huaixin, Zhou, Li, Yan, Yan, Lee, Chun-Sing, & Roy, V.A.L. (2015) Surface engineering of reduced graphene oxide for controllable ambipolar flash memories. ACS Applied Materials & Interfaces, 7(3), pp. 1699-1708.
Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.
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|Item Type:||Journal Article|
|Keywords:||self-assembled monolayer; reduced graphene oxide; work function; flash memory; ambipolar; charge-trapping behavior|
|Subjects:||Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000)|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2015 American Chemical Society|
|Deposited On:||19 Feb 2015 02:01|
|Last Modified:||23 Apr 2015 22:55|
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