Epitaxial graphene growth on 3C SiC by Si sublimation in UHV

Gupta, Bharati (2015) Epitaxial graphene growth on 3C SiC by Si sublimation in UHV. PhD thesis, Queensland University of Technology.

Abstract

This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atoms, by annealing Silicon Carbide (SiC) thin films in Ultra High Vacuum. The research lead to the discovery that the details of the transition from SiC to graphene, providing, for the first time, atomic resolution images of the different stages of the transformation and a model of the growth.

The epitaxial growth of graphene developed by this study is a cost effective procedure to obtain this material directly on Si chips, a breakthrough for the future electronic industry.

Impact and interest:

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96 since deposited on 23 Sep 2015
73 in the past twelve months

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ID Code: 86137
Item Type: QUT Thesis (PhD)
Supervisor: Motta, Nunzio & Shafiei, Mahnaz
Keywords: Epitaxial Graphene, UHV, 3C SiC, Sublimation, STM, XPS, Raman Spectroscopy
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Institution: Queensland University of Technology
Deposited On: 23 Sep 2015 06:31
Last Modified: 23 Sep 2015 06:31

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