Epitaxial graphene growth on 3C SiC by Si sublimation in UHV
Gupta, Bharati (2015) Epitaxial graphene growth on 3C SiC by Si sublimation in UHV. PhD thesis, Queensland University of Technology.
This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atoms, by annealing Silicon Carbide (SiC) thin films in Ultra High Vacuum. The research lead to the discovery that the details of the transition from SiC to graphene, providing, for the first time, atomic resolution images of the different stages of the transformation and a model of the growth.
The epitaxial growth of graphene developed by this study is a cost effective procedure to obtain this material directly on Si chips, a breakthrough for the future electronic industry.
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|Item Type:||QUT Thesis (PhD)|
|Supervisor:||Motta, Nunzio & Shafiei, Mahnaz|
|Keywords:||Epitaxial Graphene, UHV, 3C SiC, Sublimation, STM, XPS, Raman Spectroscopy|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Institution:||Queensland University of Technology|
|Deposited On:||23 Sep 2015 06:31|
|Last Modified:||23 Sep 2015 06:31|
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