Efficient and bright polymer light emitting field effect transistors

Ullah, M., Tandy, K., Yambem, S. D., Muhieddine, K., Ong, W. J., Shi, Z., Burn, P. L., Meredith, P., Li, J., & Namdas, E. B. (2015) Efficient and bright polymer light emitting field effect transistors. Organic Electronics: physics, materials, applications, 17, pp. 371-376.

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Light emitting field effect transistors (LEFETs) are emerging as a multi-functional class of optoelectronic devices. LEFETs can simultaneously execute light emission and the standard logic functions of a transistor in a single architecture. However, current LEFET architectures deliver either high brightness or high efficiency but not both concurrently, thus limiting their use in technological applications. Here we show an LEFET device strategy that simultaneously improves brightness and efficiency. The key step change in LEFET performance arises from the bottom gate top-contact device architecture in which the source/drain electrodes are semitransparent and the active channel contains a bi-layer comprising of a high mobility charge-transporting polymer, and a yellow-green emissive polymer. A record external quantum efficiency (EQE) of 2.1% at 1000cd/m2 is demonstrated for polymer based bilayer LEFETs.

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10 citations in Scopus
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8 citations in Web of Science®

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ID Code: 86721
Item Type: Journal Article
Refereed: Yes
Keywords: Display, Light emitting transistors, OLED, OTFT, Display devices, Efficiency, Light emission, Luminance, Optoelectronic devices, Phototransistors, Polymers, Thin film transistors, Transistors, Charge transporting, External quantum efficiency, Light-emitting transistors, Source/drain electrodes, Technological applications, Top-contact devices, Field effect transistors
DOI: 10.1016/j.orgel.2014.12.014
ISSN: 15661199 (ISSN)
Divisions: Current > Schools > School of Civil Engineering & Built Environment
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: © 2014 Elsevier B.V.
Deposited On: 20 Aug 2015 04:16
Last Modified: 21 Aug 2015 00:02

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