Room-temperature tilted-target sputtering deposition of highly transparent and low sheet resistance Al doped ZnO electrodes

Raju Nagiri, R. C., Yambem, S. D., Lin, Q., Burn, P. L., & Meredith, P. (2015) Room-temperature tilted-target sputtering deposition of highly transparent and low sheet resistance Al doped ZnO electrodes. Journal of Materials Chemistry C, 3(20), pp. 5322-5331.

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Target-tilted room temperature sputtering of aluminium doped zinc oxide (AZO) provides transparent conducting electrodes with sheet resistances of <10 Ω □-1 and average transmittance in the visible region of up to 84%. The properties of the AZO electrode are found to be strongly dependent on the target-tilting angle and film thickness. The AZO electrodes showed comparable performance to commercial indium tin oxide (ITO) electrodes in organic photovoltaic (OPV) devices. OPV devices containing a bulk heterojunction active layer comprised of poly(3-n-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) and an AZO transparent conducting electrode had a power conversion efficiency (PCE) of up to 2.5% with those containing ITO giving a PCE of 2.6%. These results demonstrate that AZO films are a good alternative to ITO for transparent conducting electrodes.

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3 citations in Scopus
4 citations in Web of Science®
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ID Code: 86734
Item Type: Journal Article
Refereed: No
Keywords: Butyric acid, Conductive films, Heterojunctions, Sheet resistance, Tin oxides, Zinc oxide, Bulk heterojunction, Doped zinc oxides, Indium tin oxide electrodes, Organic photovoltaic devices, Power conversion efficiencies, Room temperature, Target sputtering, Transparent conducting electrodes, Electrodes
DOI: 10.1039/c5tc00695c
ISSN: 20507534 (ISSN)
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: © The Royal Society of Chemistry.
Deposited On: 20 Aug 2015 04:08
Last Modified: 25 Jun 2017 10:02

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