Atomic resolution of dielectric with low temperature coefficient
Barry, John C. & Aoki, Toshihiro (2014) Atomic resolution of dielectric with low temperature coefficient. In Monro, T. & Netting, A. (Eds.) Proceedings of the 2014 International Conference on Nanoscience and Nanotechnology (ICONN 2014), Institute of Electrical and Electronics Engineers (IEEE), Adelaide, SA, pp. 10-12.
Ba(6-3x)Nd(8+2x)Ti(18)O(54) (BNTl14) is a high permittivity dielectric with low temperature coefficient (Tcf). Low coefficient of change of dielectric permittivity with temperature (Tcf) is an unusual materials property. The research is aimed at discovering how atomic structure relates to temperature coefficient. Sub-Ångström scanning transmission electron microscopy (STEM) is used to measure mixed occupancy of Nd and Ba in atomic columns. It was expected that phase separation would occur to accommodate mixing of dissimilar ions. However no evidence of phase separation was found. There is a good image match between experiment and high angle annular dark field (HAADF) simulation. Vacancies and excess Ba ions appear to be randomly arranged on the available sites which would result in distortion of TiO6 octahedra. The low Tcf may arise from TiO6 distortion.
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|Item Type:||Conference Paper|
|Keywords:||Dielectrics, dielectric devices, microwave communication, atomic resolution, HAADF, Perovskites|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2014 IEEE|
|Deposited On:||20 Oct 2015 01:52|
|Last Modified:||20 Oct 2015 01:54|
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