Single 2×1 domain orientation on Si(001) surfaces using aperiodic Bi line arrays
MacLeod, J.M. & McLean, A.B. (2004) Single 2×1 domain orientation on Si(001) surfaces using aperiodic Bi line arrays. Physical Review B, 70(4), 041306(R).
Studies of Bi heteroepitaxy on Si(001) have shown that lines grow to lengths of up to 500nm if the substrate is heated to above the Bi desorption temperature (500°C) during or after Bi deposition. Unlike many other nanoline systems, the lines formed by this nonequilibrium growth process have no detectable width dispersion. Although much attention has been given to the atomic geometery of the line, in this paper, we focus on how the lines can be used to create a majority 2×1 domain orientation. It is demonstrated that the Bi lines can be used to produce a single-domain orientation on Si(001) if the lines are grown on Si(001) surfaces with a regular distribution of single height steps. This is a compelling example of how a nanoscale motif can be used to modify mesoscopic surface structure on Si(001).
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|Item Type:||Journal Article|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2004 The American Physical Society|
|Deposited On:||04 Apr 2016 02:07|
|Last Modified:||04 Apr 2016 02:07|
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