Site-controlled growth of Ge nanostructures on Si(100) via pulsed laser deposition nanostenciling
Cojocaru, C.V., Bernardi, A., Reparaz, J.S., Alonso, M.I., MacLeod, J.M., Harnagea, C., & Rosei, F. (2007) Site-controlled growth of Ge nanostructures on Si(100) via pulsed laser deposition nanostenciling. Applied Physics Letters, 91, p. 113112.
The authors combine nanostenciling and pulsed laser deposition to patterngermanium(Ge)nanostructures into desired architectures. They have analyzed the evolution of the Ge morphology with coverage. Following the formation of a wetting layer within each area defined by the stencil’s apertures, Gegrowth becomes three dimensional and the size and number of Ge nanocrystals evolve with coverage. Micro-Raman spectroscopy shows that the deposits are crystalline and epitaxial. This approach is promising for the parallel patterning of semiconductor nanostructures for optoelectronic applications.
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|Item Type:||Journal Article|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2007 American Institute of Physics|
|Deposited On:||04 Apr 2016 02:18|
|Last Modified:||04 Apr 2016 02:18|
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