Site-controlled growth of Ge nanostructures on Si(100) via pulsed laser deposition nanostenciling

Cojocaru, C.V., Bernardi, A., Reparaz, J.S., Alonso, M.I., MacLeod, J.M., Harnagea, C., & Rosei, F. (2007) Site-controlled growth of Ge nanostructures on Si(100) via pulsed laser deposition nanostenciling. Applied Physics Letters, 91, p. 113112.

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The authors combine nanostenciling and pulsed laser deposition to patterngermanium(Ge)nanostructures into desired architectures. They have analyzed the evolution of the Ge morphology with coverage. Following the formation of a wetting layer within each area defined by the stencil’s apertures, Gegrowth becomes three dimensional and the size and number of Ge nanocrystals evolve with coverage. Micro-Raman spectroscopy shows that the deposits are crystalline and epitaxial. This approach is promising for the parallel patterning of semiconductor nanostructures for optoelectronic applications.

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11 citations in Scopus
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10 citations in Web of Science®

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ID Code: 89943
Item Type: Journal Article
Refereed: Yes
DOI: 10.1063/1.2783473
ISSN: 1077-3118
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2007 American Institute of Physics
Deposited On: 04 Apr 2016 02:18
Last Modified: 04 Apr 2016 02:18

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