Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure

MacLeod, J.M., Lima, C.P., Miwa, R.H., Srivastava, G.P., & McLean, A.B. (2004) Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure. Materials Science and Technology, 20(8), pp. 951-954.

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Experimental studies of Bi heteroepitaxy on Si(001) have recently uncovered a self-organised nanoline motif which has no detectable width dispersion. The Bi lines can be grown with an aspect ratio that is greater than 350 : 1. This paper describes a study of the nanoline geometry and electronic structure using a combination of scanning tunneling microscopy (STM) and ab initio theoretical methods. In particular, the effect that the lines have on Si(001) surface structure at large length scales, l > 100 nm, is studied. It has been found that Bi line growth on surfaces that have regularly spaced single height steps results in a 'preferred' domain orientation.

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7 citations in Scopus
7 citations in Web of Science®
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ID Code: 89945
Item Type: Journal Article
Refereed: Yes
DOI: 10.1179/026708304225019894
ISSN: 1743-2847
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 06 Apr 2016 00:11
Last Modified: 26 Jun 2017 05:01

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