The electronic properties of Si(001)–Bi(2 × n)

Mark, A.G., Lipton-Duffin, J.A., MacLeod, J.M., Miwa, R.H., Srivastava, G.P., & McLean, A.B. (2005) The electronic properties of Si(001)–Bi(2 × n). Journal of Physics: Condensed Matter, 17(4), pp. 571-580.

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Abstract

A Bi 2 × n surface net was grown on the Si(001) surface and studied with inverse photoemission, scanning tunnelling microscopy and ab initio and empirical pseudopotential calculations. The experiments demonstrated that Bi adsorption eliminates the dimer related π1* and π2* surface states, produced by correlated dimer buckling, leaving the bulk bandgap clear of unoccupied surface states. Ab initio calculations support this observation and demonstrate that the surface states derived from the formation of symmetric Bi dimers do not penetrate the fundamental bandgap of bulk Si. Since symmetric Bi dimers are an important structural component of the recently discovered Bi nanolines, that self-organize on Si(001) above the Bi desorption temperature, a connection will be made between our findings and the electronic structure of the nanolines.

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ID Code: 89948
Item Type: Journal Article
Refereed: Yes
DOI: 10.1088/0953-8984/17/4/001
ISSN: 1361-648X
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > Institutes > Institute for Future Environments
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2005 IOP Publishing Ltd
Deposited On: 07 Apr 2016 00:16
Last Modified: 07 Apr 2016 00:16

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