Shape transition in very large germanium islands on Si(111)

MacLeod, J.M., Lipton-Duffin, J.A., Lanke, U., Urquhart, S.G., & Rosei, F. (2009) Shape transition in very large germanium islands on Si(111). Applied Physics Letters, 94(10), p. 103109.

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Ge islands with areas up to hundreds of μm2 were grown on Si(111). These islands, grown above 750 °C and at a deposition rate of 1 monolayer/min, become decreasingly compact with increasing size and can have nonuniform cross sections with heights reaching over 500 nm. The largest islands are ramified, often comprising multiple discrete parts. X-rayphotoemission electron microscopy absorption maps show that the islands have a higher concentration of Ge at their centers, with more Si near the edges. We propose that the shape transformation is driven by strain relief at the island perimeters.

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ID Code: 89951
Item Type: Journal Article
Refereed: Yes
DOI: 10.1063/1.3093674
ISSN: 1077-3118
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > Institutes > Institute for Future Environments
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2009 American Institute of Physics
Deposited On: 04 Apr 2016 01:34
Last Modified: 19 Apr 2016 01:50

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