Modified Stranski–Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition

MacLeod, J.M., Cojocaru, C.V., Ratto, F., Harnagea, C., Bernardi, A., Alonso, M.I., & Rosei, F. (2012) Modified Stranski–Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition. Nanotechnology, 23(6), 065603.

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Abstract

The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski–Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

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ID Code: 89955
Item Type: Journal Article
Refereed: Yes
DOI: 10.1088/0957-4484/23/6/065603
ISSN: 1361-6528
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2012 IOP Publishing Ltd
Deposited On: 06 Apr 2016 22:51
Last Modified: 18 Apr 2016 02:41

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