Indium clusters on the Ge (5× 5) wetting layer of Si (111)- 7× 7
MacLeod, J.M., Psiachos, D., Stott, M.J., & McLean, A.B. (2006) Indium clusters on the Ge (5× 5) wetting layer of Si (111)- 7× 7. Physical Review B, 73(24), p. 241306.
The adsorption of In on the Si(111)−Ge(5×5) surface reconstruction has been studied with scanning tunneling microscopy and ab initio calculations to investigate the possibility of using this reconstruction as a template for cluster formation. As with In adsorption on Si(111)−7×7 at low substrate temperatures and low In fluences, the In adatoms are found to preferentially adsorb on the faulted half-unit cell. However, in contrast to In adsorption on Si(111)−7×7, the In adatoms are also frequently found in the unfaulted half-unit cell at low coverages. The filling of unfaulted unit cell halves is primarily due to the formation of large clusters that span multiple substrate half-unit cells. Moreover, many of the faulted half-unit cells have a streaked appearance that indicates that surface atoms within them are mobile.
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|Item Type:||Journal Article|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Deposited On:||05 Nov 2015 00:30|
|Last Modified:||06 Nov 2015 03:01|
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