Prediction of a large-gap quantum-spin-Hall insulator: Diamond-like GaBi bilayer

Wang, Aizhu, Du, Aijun, & Zhao, Mingwen (2015) Prediction of a large-gap quantum-spin-Hall insulator: Diamond-like GaBi bilayer. Nano Research, 8(12), pp. 3823-3829.

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A quantum-spin-Hall (QSH) state was achieved experimentally, albeit at a low critical temperature because of the narrow band gap of the bulk material. Twodimensional topological insulators are critically important for realizing novel topological applications. Using density functional theory (DFT), we demonstrated that hydrogenated GaBi bilayers (HGaBi) form a stable topological insulator with a large nontrivial band gap of 0.320 eV, based on the state-of-the-art hybrid functional method, which is implementable for achieving QSH states at room temperature. The nontrivial topological property of the HGaBi lattice can also be confirmed from the appearance of gapless edge states in the nanoribbon structure. Our results provide a versatile platform for hosting nontrivial topological states usable for important nanoelectronic device applications.

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ID Code: 90156
Item Type: Journal Article
Refereed: Yes
Keywords: topological insulators, first-principles calculations, two-dimensional cubic-diamond-like lattice, Rashba spin splitting, band inversion
DOI: 10.1007/s12274-015-0882-z
ISSN: 1998-0000
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2015 Tsinghua University Press and Springer-Verlag Berlin Heidelberg
Deposited On: 12 Nov 2015 00:34
Last Modified: 16 May 2016 05:25

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