Development of new gas sensors based on oxidized galinstan

Shafiei, Mahnaz, Hoshyargar, Faegheh, Motta, Nunzio, & O'Mullane, Anthony P. (2015) Development of new gas sensors based on oxidized galinstan. In IEEE Sensors, IEEE, Busan Busan, South Korea, pp. 619-621.


For the first time, we have fabricated and tested conductometric sensors based on oxidized liquid galinstan towards NO2 and NH3 gases at low operating temperatures. Galinstan based films on silicon substrates have been studied with two different loadings. Surface morphology of the films was investigated by means of field emission scanning electron microscopy (FESEM). The sensor with higher galinstan loading showed a better sensitivity, which can be attributed to a higher surface area, as confirmed by SEM. At 100°C, a detection limit as low as 1 and 20 ppm was measured for NO2 and NH3, respectively.

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ID Code: 91627
Item Type: Conference Paper
Refereed: Yes
Additional URLs:
Keywords: sensor, galinstan, nitrogen dioxide, ammonia
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > Institutes > Institute for Future Environments
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2015 IEEE
Deposited On: 05 Jan 2016 23:20
Last Modified: 22 Mar 2016 10:00

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