Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties

Duan, Xidong, Wang, Chen, Fan, Zheng, Hao, Guolin, Kou, Liangzhi, Halim, Udayabagya, Li, Honglai, Wu, Xueping, Wang, Yicheng, Jiang, Jianhui, Pan, Anlian, Huang, Yu, Yu, Ruqin, & Duan, Xiangfeng (2016) Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties. Nano Letters, 16(1), pp. 264-269.

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Abstract

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently emerged as a new class of atomically thin semiconductors for diverse electronic, optoelectronic, and valleytronic applications. To explore the full potential of these 2D semiconductors requires a precise control of their band gap and electronic properties, which represents a significant challenge in 2D material systems. Here we demonstrate a systematic control of the electronic properties of 2D-TMDs by creating mixed alloys of the intrinsically p-type WSe2 and intrinsically n-type WS2 with variable alloy compositions. We show that a series of WS2xSe2-2x alloy nanosheets can be synthesized with fully tunable chemical compositions and optical properties. Electrical transport studies using back-gated field effect transistors demonstrate that charge carrier types and threshold voltages of the alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. A highly p-type behavior is observed in selenium-rich alloy, which gradually shifts to lightly p-type, and then switches to lightly n-type characteristics with the increasing sulfur atomic ratio, and eventually evolves into highly n-doped semiconductors in sulfur-rich alloys. The synthesis of WS2xSe2-2x nanosheets with tunable optical and electronic properties represents a critical step toward rational design of 2D electronics with tailored spectral responses and device characteristics. © 2015 American Chemical Society.

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ID Code: 98059
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: band gap engineering, field effect transistor, Layered materials, semiconductor alloy, threshold voltage, transition metal dichalcogenide
DOI: 10.1021/acs.nanolett.5b03662
ISSN: 1530-6984
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2015 American Chemical Society
Deposited On: 17 Aug 2016 01:44
Last Modified: 18 Aug 2016 02:27

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