Formation of ripples in atomically thin MoS2 and local strain engineering of electrostatic properties

Luo, Siwei, Hao, Guolin, Fan, Yinping, Kou, Liangzhi, He, Chaoyu, Qi, Xiang, Tang, Chao, Li, Jin, Huang, Kai, & Zhong, Jianxin (2015) Formation of ripples in atomically thin MoS2 and local strain engineering of electrostatic properties. Nanotechnology, 26(10), p. 105705.

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Abstract

Ripple is a common deformation in two-dimensional materials due to localized strain, which is expected to greatly influence the physical properties. The effects of the ripple deformation in the MoS2 layer on their physics, however, are rarely addressed experimentally. We here grow atomically thin MoS2 nanostructures by employing a vapor phase deposition method without any catalyst and observed the ripples in MoS2 nanostructures. The MoS2 ripples exhibit quasi-periodical ripple structures in the MoS2 surface. The heights of the ripples vary from several angstroms to tens of nanometers and the wavelength is in the range of several hundred nanometers. The growth mechanism of rippled MoS2 nanostructures is elucidated. We have also simultaneously investigated the electrostatic properties of MoS2 ripples by using Kelvin probe force microscopy, which shows inhomogeneous surface potential and charge distributions for MoS2 ripple nanostructures with different local strains. © 2015 IOP Publishing Ltd.

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10 citations in Scopus
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13 citations in Web of Science®

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ID Code: 98202
Item Type: Journal Article
Refereed: Yes
Keywords: electrostatic properties, Kelvin probe force microscopy, local strain, MoS2 ripple nanostructures, surface potential
DOI: 10.1088/0957-4484/26/10/105705
ISSN: 0957-4484
Copyright Owner: Copyright 2015 IOP Publishing Ltd.
Deposited On: 18 Aug 2016 06:04
Last Modified: 19 Aug 2016 00:33

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