Encapsulated silicene: A robust large-gap topological insulator

Kou, Liangzhi, Ma, Yandong, Yan, Binghai, Tan, Xin, Chen, Changfeng, & Smith, Sean C. (2015) Encapsulated silicene: A robust large-gap topological insulator. ACS Applied Materials and Interfaces, 7(34), pp. 19226-19233.

View at publisher


The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene's small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin-orbit coupling effect in TMDCs via the proximity effect. Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. The encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication. © 2015 American Chemical Society.

Impact and interest:

5 citations in Scopus
Search Google Scholar™
2 citations in Web of Science®

Citation counts are sourced monthly from Scopus and Web of Science® citation databases.

These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.

Citations counts from the Google Scholar™ indexing service can be viewed at the linked Google Scholar™ search.

ID Code: 98203
Item Type: Journal Article
Refereed: Yes
Keywords: encapsulation, first-principles calculations, large gap, proximity effect, silicene, topological insulator
DOI: 10.1021/acsami.5b05063
ISSN: 1944-8244
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2015 American Chemical Society
Deposited On: 25 Aug 2016 02:35
Last Modified: 26 Aug 2016 01:48

Export: EndNote | Dublin Core | BibTeX

Repository Staff Only: item control page