Analysis of Nitrogen Implanted Tin Oxide Films used in Dye-Sensitised Solar Cells
(2004) Analysis of Nitrogen Implanted Tin Oxide Films used in Dye-Sensitised Solar Cells. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 217(1):pp. 97-103.
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Abstract
We have investigated the distribution and amount of nitrogen implanted in tin oxide films using SIMS and XPS depth profiling. The amount of nitrogen was found to increase with increasing ion dose and energy. In the nitrogen depth profile a peak was observed indicating the position of the maximum nitrogen concentration and the result was verified using theoretical calculations. The relative distribution of nitrogen compared to tin was found to decrease continuously with increasing depth of the film.
| Item Type: | Journal Article |
|---|---|
| RM Number: | 2005000483 |
| Status: | Published |
| Keywords: | tin oxide; nitrogen ion implantation; XPS analysis; SIMS depth profiling |
| Subjects: | 290000 Engineering and Technology > 291400 Materials Engineering > 291499 Materials Engineering not elsewhere classified |
| ID Code: | 7662 |
| Deposited By: | Tesfamichael, Tuquabo |
| Deposited On: | 15 May 2007 |
| Alternative Locations: | http://dx.doi.org/10.1016/j.nimb.2003.09.021 |
| Copyright Owner: | Copyright 2004 Elsevier |
| Additional Information: | For more information, please refer to the journal's website (see hypertext link) or contact the author. t.tesfamichael@qut.edu.au |