Nitrogen Ion Implantation and Characterization of Tungsten Oxide Films

Tesfamichael, Tuquabo and Bell, John (2005) Nitrogen Ion Implantation and Characterization of Tungsten Oxide Films. In Chiao, Jung-Chih and Dzurak, Andrew S. Dzurak and Jagadish, Chennupati and Thiel, David V., Eds. Proceedings Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE 6037, pages 1L-9L, Brisbane, Australia.

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Abstract

This paper implements modification of tungsten oxide film using ion implantation and a physical characterization of the film. The film was implanted with nitrogen at energies between 10 keV and 40 keV and ion dose range 1014–1016 cm-2. The surface morphology of the film after implantation has been modified as observed using electron microscopy. The transmittance of the film was found to decrease with increasing implantation energy and ion dose as measured using conventional spectrophotometer. Depth profile of nitrogen was analyzed using Secondary Ion Mass Spectroscopy (SIMS) and found a peak of nitrogen across the depth of the implanted layer. The amount of nitrogen was found to increase with increasing ion dose and energy. From electron diffraction a broader diffraction rings were revealed from both the implanted and un-implanted layers, indicating that the crystalline properties of the tungsten oxide film after ion implantation remains the same.

Item Type:	Conference Poster
RM Number:	2006002173
Status:	Published
Keywords:	Tungsten oxide; Nitrogen ion implantation; Optical properties; Microscopic structure; Nitrogen depth profile
Subjects:	290000 Engineering and Technology > 291400 Materials Engineering > 291499 Materials Engineering not elsewhere classified
ID Code:	7902
Deposited By:	Tesfamichael, Tuquabo
Deposited On:	04 June 2007
Alternative Locations:	http://spiedl.aip.org/journals/doc/SPIEDL-home/proc/
Copyright Owner:	Copyright 2005 The Society of Photo-Optical Instrumentation Engineers.
Copyright Statement:	This paper was published in Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE and is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.