Directional Carrier Polarity Tunability in Ambipolar Organic Transistors Based on Diketopyrrolopyrrole and Bithiophene Imide Dual-Acceptor Semiconducting Polymers

, He, Waner, Shi, Yongqiang, Otep, Sultan, Tan, Wen Liang, Manzhos, Sergei, McNeill, Christopher R., Guo, Xugang, , Michinobu, Tsuyoshi, & Kyaw, Aung Ko Ko (2022) Directional Carrier Polarity Tunability in Ambipolar Organic Transistors Based on Diketopyrrolopyrrole and Bithiophene Imide Dual-Acceptor Semiconducting Polymers. Chemistry of Materials, 34(7), pp. 3140-3151.

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Description

An organic ambipolar transistor allows the integration of p-type and n-type charge carrier transport in a single device. However, the tunability of carrier polarity to meet specific requirements for practical applications is challenging and thus rarely studied. In this work, two dual-acceptor-type polymers (FuI and SeI) based on diketopyrrolopyrrole (DPP) and bithiophene imide (BTI) are reported. By varying the flanking groups of DPP (furan for FuI and selenophene for SeI) and through an ionic additive strategy, the charge carrier polarity of both polymers in organic field-effect transistors (OFETs) can be directionally tuned. Specifically, pristine polymers exhibited an ambipolar property with the μeh values of 2.79 for FuI and 4.9 for SeI. Notably, the average electron mobility of SeI reaches as high as 0.122 cm2 V–1 s–1. More encouragingly, with 11.76% tetrabutylammonium iodide (TBAI, mole percentage) as an additive to the FuI polymer, the μeh of resultant OFETs varied from 2.79 to 0.71, showing the conversion from n-type dominant to p-type dominant transport. With the same mole percentage of the TBAI to SeI polymer, a dramatic increment of μeh from 4.9 to 264 was observed, demonstrating the significant conversion from n-type dominant ambipolar to unipolar n-type transport. Overall, this study demonstrates the possibility of directional tunability of carrier polarity in organic ambipolar transistors with DPP- and BTI-based dual-acceptor polymers through molecular modification and the ionic additive strategy, being significantly beneficial for complementary circuits.

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8 citations in Web of Science®
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ID Code: 229285
Item Type: Contribution to Journal (Journal Article)
Refereed: Yes
ORCID iD:
Sonar, Prashantorcid.org/0000-0002-1119-4897
Additional Information: Acknowledgments: Q.L. thanks the project funded by the China Postdoctoral Science Foundation (2021M701551). P.S. is thankful to QUT for the financial support from the Australian Research Council (ARC) for the Discovery Grant (DP210103006) and QUT core funding (QUT/322120-0301/07). A.K.K.K. acknowledges the National Natural Science Foundation of China (grant no. 62150610496), Department of Education of Guangdong Province University Innovation Foundation (2021KTSCX107), and Guangdong Basic and Applied Basic Research Foundation (2020A1515010916). T.M. thanks JSPS KAKENHI grant 19H02786, JST ASTEP JPMJTM20CS, and the Heiwa Nakajima Foundation. W.H. thanks JST SPRING, grant number JPMJSP2106 and the Oversea Study Program of the Guangzhou Elite Project. We also thank Prof. H. Otsuka and Y. Lu (Tokyo Institute of Technology) for the assistance of EPR measurements. This work was performed in part at the SAXS/WAXS beamline, part of ANSTO.
Measurements or Duration: 12 pages
DOI: 10.1021/acs.chemmater.1c04258
ISSN: 0897-4756
Pure ID: 107600822
Divisions: Current > Research Centres > Centre for Materials Science
Current > Research Centres > Centre for a Waste Free World
Current > QUT Faculties and Divisions > Faculty of Science
Current > Schools > School of Chemistry & Physics
Funding:
Copyright Owner: 2022 American Chemical Society
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Deposited On: 05 Apr 2022 00:50
Last Modified: 12 Jul 2024 10:24