Van der Waals epitaxy of transition metal dichalcogenides on graphene

(2023) Van der Waals epitaxy of transition metal dichalcogenides on graphene. PhD thesis, Queensland University of Technology.

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This research is a fundamental study of the direct epitaxial growth of MoS2 on diverse types of graphene substrates, including self-standing and graphene/SiC, using chemical vapour deposition (CVD). The size, quality, and growth rate of epitaxial graphene on SiC, subsequently used as a substrate for the formation of MoS2, is controlled with high precision using a novel face-to-face technique in ultra-high vacuum. The effect of growth parameters and substrate characteristics on the CVD growth of MoS2 are investigated to design an optimised viable approach for the growth of high-quality MoS2/Graphene heterostructures.

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ID Code: 238199
Item Type: QUT Thesis (PhD)
Supervisor: Motta, Nunzio, MacLeod, Jennifer, & Ostrikov, Ken
ORCID iD:
Zebardastan, Negarorcid.org/0000-0002-5857-3229
Additional Information: Recipient of a 2023 Outstanding Doctoral Thesis Award
Keywords: 2D material, Chemical vapour deposition, Epitaxial growth, Epitaxial graphene, graphene, heterostructures, MoS2,, transition metal dichalcogenides, van der Waals materials, Face-to-Face technique, ODTA
DOI: 10.5204/thesis.eprints.238199
Pure ID: 125978694
Divisions: Current > QUT Faculties and Divisions > Faculty of Science
Current > Schools > School of Chemistry & Physics
Institution: Queensland University of Technology
Deposited On: 23 Feb 2023 06:55
Last Modified: 18 Jun 2024 04:01