Unravelling the optoelectronic properties of two-dimensional heterostructures
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Description
Due to their atomically thin dimensions, 2D materials are a natural choice in the search for new materials which can continue the trend of miniaturisation of electronic devices whilst also maintaining high performance. By harnessing the unique electrical and optical properties of 2D materials the next generation of (opto)electronic devices are set to be radically improved by the rapidly developing field of 2D materials. This thesis explores the properties of a 2D field-effect phototransistor consisting of a hexagonal boron nitride (h-BN) and molybdenum disulphide (MoS2) heterostructure.
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| ID Code: | 239054 |
|---|---|
| Item Type: | QUT Thesis (Master of Philosophy) |
| Supervisor: | Qi, Dongchen, Kou, Liangzhi, & Motta, Nunzio |
| Keywords: | 2D Materials, Field Effect Transistor, Molybdenum Disulphide, Hexagonal Boron Nitride, Phototransistor, Photomemory, Optoelectronic Memory, Persistent Photocurrent, Photogating Effect, Photoconductive Effect |
| DOI: | 10.5204/thesis.eprints.239054 |
| Pure ID: | 129304011 |
| Divisions: | Current > QUT Faculties and Divisions > Faculty of Science Current > Schools > School of Chemistry & Physics |
| Institution: | Queensland University of Technology |
| Deposited On: | 06 Apr 2023 03:49 |
| Last Modified: | 06 Apr 2023 03:49 |
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