Early Stage of Ge Growth on Si(001) Vicinal Surfaces with 8 degrees Miscut Along[1-10]

Szkutnik, Pierre-David, Sgarlata, Anna, Ronda, Antoine, Motta, Nunzio, Berbezier, Isabelle, & Balzarotti, Adalberto (2007) Early Stage of Ge Growth on Si(001) Vicinal Surfaces with 8 degrees Miscut Along[1-10]. Physical Review B (Condensed Matter and Materials Physics), 75(3), 033305.


View at publisher


The atomistic pathway towards the growth of semiconductor heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at T=600 degrees Celsius on a 8 degrees off Si(001) surface miscut along [110] is performed by scanning tunneling microscopy (STM). The microscopic processes occurring during growth are identified. Highly resolved STM images show how double height steps, which characterize the clean substrate, evolve by a step flow process generated by ad-dimer chains located at specific positions. This process leads to the formation of metastable single domains until the development of {105} faceted ripples extending along the whole surface in the miscut direction.

Impact and interest:

32 citations in Scopus
31 citations in Web of Science®
Search Google Scholar™

Citation counts are sourced monthly from Scopus and Web of Science® citation databases.

These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.

Citations counts from the Google Scholar™ indexing service can be viewed at the linked Google Scholar™ search.

Full-text downloads:

224 since deposited on 20 Oct 2006
6 in the past twelve months

Full-text downloads displays the total number of times this work’s files (e.g., a PDF) have been downloaded from QUT ePrints as well as the number of downloads in the previous 365 days. The count includes downloads for all files if a work has more than one.

ID Code: 5273
Item Type: Journal Article
Refereed: Yes
Keywords: Si(100), Ge, Vicinal surfaces, Heterostructures, Crystal growth
DOI: 10.1103/PhysRevB.75.033305
ISSN: 1550-235X
Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Past > QUT Faculties & Divisions > Faculty of Science and Technology
Copyright Owner: Copyright 2007 American Physical Society
Copyright Statement: Reproduced in accordance with the copyright policy of the publisher.
Deposited On: 20 Oct 2006 00:00
Last Modified: 02 Jul 2017 12:01

Export: EndNote | Dublin Core | BibTeX

Repository Staff Only: item control page