Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Yu, J., Chen, G., Li, C.X., , Ou, J., du Plessis, Johan, Kalantar-zadeh, Kourosh, Lai, P.T., & Wlodarski, Wojtek (2011) Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates. Sensors and Actuators, A: Physical, 172(1), pp. 9-14.

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Description

We developed Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta2O5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications.

Impact and interest:

25 citations in Scopus
22 citations in Web of Science®
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ID Code: 59664
Item Type: Contribution to Journal (Journal Article)
Refereed: Yes
ORCID iD:
Shafiei, Mahnazorcid.org/0000-0002-3520-1553
Measurements or Duration: 6 pages
Keywords: Gas sensor, Hydrogen, RF sputtering, Schottky diode, Tantalum oxide
DOI: 10.1016/j.sna.2011.02.021
ISSN: 0924-4247
Pure ID: 32065073
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Past > Schools > School of Engineering Systems
Past > QUT Faculties & Divisions > Science & Engineering Faculty
Copyright Owner: Consult author(s) regarding copyright matters
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Deposited On: 07 May 2013 23:24
Last Modified: 31 Mar 2024 20:13