?url_ver=Z39.88-2004&rft_id=10.5204%2Fthesis.eprints.238199&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rft.title=Van+der+Waals+epitaxy+of+transition+metal+dichalcogenides+on+graphene&rft.creator=Zebardastan%2C+Negar&rft.subject=2D+material&rft.subject=Chemical+vapour+deposition&rft.subject=Epitaxial+growth&rft.subject=Epitaxial+graphene&rft.subject=graphene&rft.subject=heterostructures&rft.subject=MoS2%2C&rft.subject=transition+metal+dichalcogenides&rft.subject=van+der+Waals+materials&rft.subject=Face-to-Face+technique&rft.subject=ODTA&rft.description=This+research+is+a+fundamental+study+of+the+direct+epitaxial+growth+of+MoS2+on+diverse+types+of+graphene+substrates%2C+including+self-standing+and+graphene%2FSiC%2C+using+chemical+vapour+deposition+(CVD).+The+size%2C+quality%2C+and+growth+rate+of+epitaxial+graphene+on+SiC%2C+subsequently+used+as+a+substrate+for+the+formation+of+MoS2%2C+is+controlled+with+high+precision+using+a+novel+face-to-face+technique+in+ultra-high+vacuum.+The+effect+of+growth+parameters+and+substrate+characteristics+on+the+CVD+growth+of+MoS2+are+investigated+to+design+an+optimised+viable+approach+for+the+growth+of+high-quality+MoS2%2FGraphene+heterostructures.&rft.publisher=Queensland+University+of+Technology&rft.date=2023-02-22&rft.type=Thesis&rft.format=application%2Fpdf&rft.relation=https%3A%2F%2Feprints.qut.edu.au%2F238199%2F1%2FNegar%252BZebardastan%252BThesis%25282%2529.pdf&rft.rights=free_to_read&rft.rights=http%3A%2F%2Fcreativecommons.org%2Flicenses%2Fby-nc-nd%2F4.0%2F&rft.relation=doi%3A10.5204%2Fthesis.eprints.238199&rft.relation=Zebardastan%2C+Negar+(2023)+Van+der+Waals+epitaxy+of+transition+metal+dichalcogenides+on+graphene.+PhD+thesis%2C+Queensland+University+of+Technology.&rft.id_number=https%3A%2F%2Feprints.qut.edu.au%2F238199%2F&rft.identifier=Faculty+of+Science%3B+School+of+Chemistry+%26+Physics